Last Updated on June 15, 2026
onsemi just dropped a brand new GaN power family. It is called GaNEXUS. And it is aimed straight at the heart of every silicon MOSFET sitting inside a power converter and also most of the power drivers. It is announced on June 9, 2026, GaNEXUS is onsemi’s full gallium nitride (GaN) power portfolio. FETs from 40V all the way up to 650V. Plus a smarter 650V part with protection baked right in.
So what is it? And how does it stack up against the GaN FET that Texas Instruments has been shipping for years and also i’m using for few of my design. Let’s break it down. Remember this is just a comparison according to me and it is not a recommendation or promotion.
What exactly is GaNEXUS?
GaNEXUS is not one chip. It is a whole lineup of GaN power FETs. The first wave is sampling now. Two things stand out that is plain GaNEXUS FETs spanning 40V to 650V, and GaNEXUS Smart — 650V GaN FETs with integrated protection.
The target list reads like a who’s-who of power hungry hardware. AI data center power delivery, 48V server systems, Battery backup units, Robotics, Motor drives, EV charging and also Energy infrastructure.
Why all the data center talk? Because the numbers are brutal. onsemi points out that AI data centers alone could eat up to 9% of all US electricity by 2030. And power plus cooling already swallows up to 40% of what it costs to run a data center. Every fraction of a percent of efficiency matters at that scale.
GaN FET vs silicon MOSFET
Here is the thing GaNEXUS is really selling. GaN beats silicon at switching. A regular silicon MOSFET has a body diode. That body diode stores charge. Every time the device switches, that stored charge and reverse recovery, or Qrr has to be cleared out. That wastes energy. And it slows you down. This what happens in the regular MOSFET.
In other hand, a GaN FET do Near zero reverse recovery. Tiny output capacitance and Tiny gate charge. So that GaN FET gives you faster switching, Lower switching losses, and Higher switching frequency with low wastes of energy.
And higher frequency is the magic trick. Crank the frequency up, and your transformers and inductors get smaller. Smaller magnetics. Smaller everything. That is why onsemi can claim what it claims.
The numbers onsemi is putting on the table, onsemi split the wins into two camps.
For low and medium voltage – think 48V intermediate bus converters, battery backup, motor drives – GaNEXUS promises around 30–60% smaller magnetics, 1.5x to 2x higher power density, and a 0.5–2% efficiency bump depending on topology.
For high voltage – AI power shelves, high-voltage DC-DC, PFC, and LLC stages – it claims up to 60% smaller magnetics, the same 1.5x to 2x power density, and a 0.5–1% efficiency gain.
Half a percent does not sound like much. At data center scale, it is a massive operating cost.
GaNEXUS also pairs with onsemi’s Treo Platform – their sensing, control, and protection stack – so the GaN sits inside a fuller system-level solution. And the packages are built for real thermal work: TOLL bottom cooling, TOLT top cooling, plus compact 3.3mm × 3.3mm and 5mm × 6mm dual-cooling options.
onsemi GaNEXUS vs TI’s GaN FET
Now the fun part. onsemi is not first to this party.
Texas Instruments has been shipping integrated GaN for years. Their flagship is the LMG3522R030 is a 650V, 30mΩ GaN FET with a driver, protection, AND temperature reporting all in one package.
Sound familiar? It should. That is almost exactly the pitch behind GaNEXUS Smart.
Here is how the two line up.
| Feature | onsemi GaNEXUS Smart | TI LMG3522R030 |
|---|---|---|
| Type | 650V GaN FET, integrated protection | 650V GaN FET, integrated driver + protection |
| RDS(ON) | Not public yet (sampling) | 30 mΩ |
| Breakdown voltage | 650V class | More than 800V |
| Switching speed | Fast switching (spec TBD) | Up to 150 V/ns, adjustable down to 20 V/ns |
| Built-in protection | Yes, integrated | Overcurrent, short-circuit, over-temp, UVLO |
| Temperature reporting | Via Treo platform | On-chip PWM duty-cycle output |
| Cooling / package | TOLL, TOLT, dual-cool 3.3×3.3 / 5×6 mm | Top-cooled 12 × 12 mm VQFN |
| Status | Sampling (June 2026) | In production, buy it today |
A couple of honest caveats. GaNEXUS just started sampling, so onsemi has not published full datasheet numbers like RDS(ON) for the Smart part yet. TI’s LMG3522R030 has been out long enough that you can order it and read every spec. So this is a “new challenger vs proven incumbent” matchup — not an apples-to-apples bench test. Not yet.
So which approach wins?
Both companies landed on the same big idea. Do not just sell a bare GaN switch. Wrap it in protection.
Why? Because GaN switches FAST. And fast switching is unforgiving. Get the gate drive wrong, miss an overcurrent event, and a bare GaN FET can fail in microseconds. Integrating the driver and protection on-chip takes that risk off the designer’s plate.
TI’s angle is a tightly integrated direct-drive GaN FET. On-chip temperature and fault reporting. Adjustable slew rate to tame EMI. A breakdown margin above 800V. There are even soft-switching variants — the LMG3526R030 adds zero-voltage detection, the LMG3527R030 adds zero-current detection. Proven in the field.
onsemi’s angle is breadth. A full voltage ladder from 40V to 650V. The Smart parts for protection. And the Treo platform tying sensing and control together across the whole power chain. One vendor, top to bottom.
If you need it today, TI ships today. If you are designing a next-gen 48V-to-GPU rail and want one supplier across every voltage domain, GaNEXUS is worth watching closely, and remember this just my view and not a promotion, and if you have different openion just comment it.